naina s emiconductor st andard recovery diodes features ? diffused series ? industrial grade ? available in normal and reverse polarity ? metric and unf thread type electrical specifications (t e = 25 0 c, unless otherwise symbol parameters i f(av) maximum avg. forward current @ t e = 150 o c v fm maximum peak forward voltage drop @ rated i f(av) i fsm maximum peak one cycle (non-rep) surge current @ 10 msec i frm maximum peak repetitive surge current i 2 t maximum i 2 t rating (non- rep) for 5 to 10 msec electrical ratings (t e = 25 0 c, unless otherwise noted) type number voltage code v rrm, maximum repetitive peak reverse voltage (v) v 10 100 20 200 40 400 60 600 100NS(r) 80 800 100 1000 120 1200 140 1400 160 1600 emiconductor ltd. 100 andard recovery diodes (stud and flat base type) do- 205aa (do c, unless otherwise noted) values units = 100 a maximum peak forward voltage drop 1.3 v 2200 a 5000 a rep) for 5 to 26000 a 2 sec c, unless otherwise noted) v r(rms), maximum rms reverse voltage (v) v r, maximum dc blocking voltage (v) recommended rms working voltage (v) 70 100 40 140 200 80 280 400 160 420 600 240 560 800 320 700 1000 400 840 1200 480 980 1400 560 1120 1600 640 100 ns(r) (stud and flat base type) 205aa (do -8) recommended rms working voltage i r(av), maximum avg. reverse leakage current (a) 200
naina s emiconductor thermal & mechanical specifications (t e = 25 symbol parameters r th(jc) maximum thermal resistance, junction to case t j operating junction temperature range t stg storage temperature mounting torque (non- lubricated threads) w approximate allowable weight emiconductor ltd. 100 all dimensions in mm = 25 0 c, unless otherwise noted) parameters values maximum thermal resistance, junction to case 0.4 operating junction temperature range - 65 to 150 -65 to 200 lubricated threads) 2.0 (min) C 3.0 150 100 ns(r) values units 0 c/w 65 to 150 0 c 200 0 c 3.0 (max) g
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